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25 results for O. Thomas

Stress development during the reactive formation of silicide films
- - Olivier Thomas
  - Patrice Gergaud
  - et al.
- 2004
- DIMAT 2004
Dopant diffusion in silicides: Effect of diffusion paths
- - Carol Stanis
  - J.M. Cotte
  - et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Some Titanium Germanium and Silicon Compounds: Reaction and Properties
- - O. Thomas
  - F.M. d' Heurle
  - et al.
- 2011
- Journal of Materials Research
Reacted amorphous layers: Tantalum and niobium oxides
- - O. Thomas
  - F.M. D’Heurle
  - et al.
- 2006
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Interfacial reactions between Al and RuO₂, MoO_x and WN_x diffusion barriers on Si
- - S.-E. Hörnström
  - A. Charai
  - et al.
- 2004
- Surface and Interface Analysis
Stresses during silicide formation: A review
- - F.M. D'Heurle
  - O. Thomas
- 1996
- Defect and Diffusion Forum
Diffusion of elements implanted in amorphous titanium disilicide
- - F.M. d'Heurle
  - J.M. Cotte
  - et al.
- 1993
- Applied Surface Science
Electrical and optical properties of silicide single crystals and thin films
- - F. Nava
  - K.N. Tu
  - et al.
- 1993
- Materials Science Reports
Diffusion of dopants in tungsten disilicide: effects of diffusion paths
- - O. Thomas
  - G. Scilla
  - et al.
- 1991
- Applied Surface Science
The reaction of scandium thin films with silicon: diffusion, nucleation, resistivities
- - O. Thomas
  - C.S. Petersson
  - et al.
- 1991
- Applied Surface Science