Stefano Ambrogio, Pritish Narayanan, et al.
Nature
We report on material improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as bidirectional analog synapses for on-chip acceleration of the backpropagation algorithm. Previous Al/PCMO devices exhibited degraded LRS retention due to the low activation energy for oxidation of the Al electrode, and Mo/PCMO devices showed low conductance contrast. To control the redox reaction at the metal/PCMO interface, we introduce a 4-nm interfacial layer of conducting MoOx as an oxygen buffer layer. Due to the controlled redox reaction within this Al/Mo/PCMO device, we observed improvements in both retention and conductance on/off ratio. We confirm bidirectional analog synapse characteristics and measure 'jump-tables' suitable for large scale neural network simulations that attempt to capture complex and stochastic device behavior [see companion paper]. Finally, switching energy measurements are shown, illustrating a path for future device research toward smaller devices, shorter pulses and lower programming voltages.
Stefano Ambrogio, Pritish Narayanan, et al.
Nature
S. Sidler, Irem Boybat, et al.
ESSDERC 2016
Alessandro Fumarola, S. Sidler, et al.
IEEE J-EDS
Irem Boybat, Carmelo Di Nolfo, et al.
ICRC 2017