Stoichiometric and structural origin of electronic states at the Pd2Si-Si interface

Abstract

Extra Si density of states has been observed within about 3-4 of the Pd2Si-Si(111) interface. Spectral analysis indicated that most of these states exist near the Si band-gap region and originate from an atomic environment more Si rich than Pd2Si. Transmission-electron-microscopy lattice images showed a structurally sharp Pd2Si-Si interface with misfit dislocations and atomic-step imperfections. It is suggested that the interfacial bonding in such a structure can account for the observed interface states. © 1981 The American Physical Society.