N.I. Buchan, T.F. Kuech, et al.
Journal of Crystal Growth
The valence subband dispersion of GaAs/AlGaAs quantum wells is measured with meV accuracy using the recombination of hot electrons at neutral acceptors. This precision, in combination with polarization-dependent matrix elements, allows direct observation and measurement of the warping. The measurements, for in-plane wave vectors which extend over a substantial fraction of the Brillouin zone, are shown to be in very good agreement with kp calculations. © 1992 The American Physical Society.
N.I. Buchan, T.F. Kuech, et al.
Journal of Crystal Growth
M.A. Tischler, B.D. Parker
Applied Physics Letters
M.A. Tischler, N.G. Anderson, et al.
Proceedings of SPIE 1989
J.A. Kash, J.C. Tsang
IEEE Electron Device Letters