Chips at Work: Picosecond Imaging Circuit Analysis
J.A. Kash, J.C. Tsang
UEO 1999
The rates at which hot electrons scatter from the valley to the L and X valleys in GaAs have been measured as a function of electron energy. Scattering times are determined from the relative efficiency of recombination of hot electrons with neutral acceptors at low injected-carrier densities. Representative scattering times are L=540±120 fsec for 0.48-eV electrons and X=180±40 fsec for 0.58-eV electrons. Our results enable us to reconcile the large range of scattering rates reported in other experiments and demonstrate the power of this cw probe to study subpicosecond electron dynamics. © 1989 The American Physical Society.
J.A. Kash, J.C. Tsang
UEO 1999
J.A. Kash, J.C. Tsang
IEEE Electron Device Letters
B. Pezeshki, F. Tong, et al.
IEEE Photonics Technology Letters
J.C. Tsang, John Kirtley
Solid State Communications