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Publication
IEEE International SOI Conference 2003
Conference paper
Analysis of the Impact of Gate-Body Signal Phase on DTMOS Inverters in 0.13μm PD-SOI
Abstract
The impact of gate-body signal phase on dynamic-threshold transistors (DTMOS) inverters in 0.13 μm PD-SOI was analyzed. Measurements showed that even at low voltages, DTMOS is slower and uses more energy than floating-body (FB) transistors. It was found that positive body-conditioned PS-DTMOS is faster than FB transistors.