PaperSuper fast physics-based methodology for accurate memory yield predictionRajiv V. Joshi, Keunwoo Kim, et al.IEEE Transactions on VLSI Systems
PaperEvaluation of 10-nm Bulk FinFET RF Performance - Conventional Versus NC-FinFETR. Singh, K. Aditya, et al.IEEE Electron Device Letters
Conference paper7-nm Nanowire FET process variation modeling using industry standard BSIM-CMG modelR. Singh, K. Aditya, et al.ICEE 2016
Conference paperETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cellKangguo Cheng, A. Khakifirooz, et al.VLSI Technology 2011
