J.K. Gimzewski, T.A. Jung, et al.
Surface Science
A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of a 0.25 micron channel length silicon nMOS device with Ti/Ge/Si source and drain contacts and a Ti/Al metal gate.
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
P. Alnot, D.J. Auerbach, et al.
Surface Science
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
H.D. Dulman, R.H. Pantell, et al.
Physical Review B