Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of a 0.25 micron channel length silicon nMOS device with Ti/Ge/Si source and drain contacts and a Ti/Al metal gate.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME