Conference paper
Strain engineering for silicon CMOS technology
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005
H.J. Hovel, M. Albert, et al.
Conference on Semi-Insulating III-V Materials 1990
J. Freeouf, Alan C. Warren, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
G.M. Blom, J. Woodall
Journal of Electronic Materials