Conference paper
GaAs MESFET 16 × 16 crosspoint switch at 1700 Mbits/sec
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
Z. Hang, D. Yan, et al.
Physical Review B
C.W. Seabury, C.W. Farley, et al.
IEEE Transactions on Electron Devices
M.R. Melloch, D.D. Nolte, et al.
IEEE T-ED