Chu R. Wie, G. Burns, et al.
Nuclear Inst. and Methods in Physics Research, B
Paper
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cells
Abstract
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
Related
Conference paper
Base recombination in high performance InGaAs/InP HBTs
C.W. Seabury, C.W. Farley, et al.
Device Research Conference 1993
S. Chang, I.M. Vitomirov, et al.
Physical Review B
J. Woodall, H.J. Hovrl
Journal of Crystal Growth