Publication
Applied Physics Letters
Paper

Nature of band bending at semiconductor surfaces by contactless electroreflectance

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Abstract

The nature of the band bending at semiconductor surfaces (and related carrier type) is an important materials parameter. We demonstrate that an electroreflectance mode which employs a capacitorlike configuration can conveniently be used for this evaluation in a contactless manner. Results will be presented on n- and p-type bulk GaAs, semi-insulating GaAs, nominally undoped In0.15Ga0.85As and n- and p-type GaAs and InP structures with large, almost uniform electric fields.

Date

01 Dec 1992

Publication

Applied Physics Letters

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