An extended model for carbon nanotube field-effect transistors

Abstract

An extended SB-model for Carbon nanotube field effect transistor (CNFET), was presented. The current injection via a mediated way through the segment density, which altered nanotube underneath the metal contacts, and the energy gap of the carbon nanotube with an average diameter of ∼1.4 nm, were the two critical aspects of this model. The charge in and the current through the CNFET was calculated self-consistently using the non-equilibrium Green's function formalism together with modified 1D poisson equation due to Young. The simulation also permits quantitative description of subthreshold chracteristics of CNFETs over the entire gate voltage range.