Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
We present experimental studies on the performance of ultra-thin body SOI tunnel FETs depending on channel length, gate oxide thickness and source/drain doping concentrations. Electrical measurements show no dependance on channel length, however, a strong dependance on gate oxide thickness and doping concentration is found. Our experimental results match calculations based on a simple Landauer model employing the Wenzel-Kramer-Brillouin approximation for the tunneling process. Bandgap narrowing and the electrostatics of the tunneling junction are found to be the main factors impacting the on-state performance of the tunnel FET. © 2009 Elsevier Ltd. All rights reserved.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
David B. Mitzi
Journal of Materials Chemistry
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry