Ambipolar light-emitting organic field-effect transistor

Abstract

A light-emitting organic field-effect transistor (OFET) with ambipolar current characteristics was studied. The light intensity was controlled by both the drain-source voltage and the gate voltage. The device structure serves as a model system for ambipolar light-emitting OFETs. The device demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.