About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Ambipolar light-emitting organic field-effect transistor
Abstract
A light-emitting organic field-effect transistor (OFET) with ambipolar current characteristics was studied. The light intensity was controlled by both the drain-source voltage and the gate voltage. The device structure serves as a model system for ambipolar light-emitting OFETs. The device demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.