Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
In situ Ultra-High Vacuum (UHV) electron microscopy, including Transmission Electron Microscopy (TEM) at 300 keV electron energy and Low-Energy Electron Microscopy (LEEM) at 0-30 eV electron energy, has advanced enormously over the last decade. Growth of thin films such as epitaxial Si1-xGex alloy thin films on Si substrates has become routine, allowing high-resolution video-rate studies of processes such as misfit dislocation injection and interaction, surface roughening and faceting, self-assembly of quantum dots, and shape transitions in such quantum dots. We review results obtained in the SiGe/Si system in the last five years. In addition we discuss new directions in in situ electron microscopy as they apply to thin film formation in a range of materials and environments.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Kigook Song, Robert D. Miller, et al.
Macromolecules
John G. Long, Peter C. Searson, et al.
JES