Publication
IEEE International SOI Conference 1996
Conference paper
Accurate measurement of pass-transistor leakage current in SOI MOSFETs
Abstract
The magnitude of pass-transistor leakage currents in partially-depleted silicon-on-insulator (SOI) NMOSFETS is accurately measured with its temperature, device and bias dependencies. Leakage current measurements are performed on a very short time scale while allowing for long relaxation times in between measurements. A high-bandwidth pulse measurement system is used, with all components having a bandwidth of at least 10 GHz.