IEEE International SOI Conference 1996
Conference paper

Accurate measurement of pass-transistor leakage current in SOI MOSFETs

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The magnitude of pass-transistor leakage currents in partially-depleted silicon-on-insulator (SOI) NMOSFETS is accurately measured with its temperature, device and bias dependencies. Leakage current measurements are performed on a very short time scale while allowing for long relaxation times in between measurements. A high-bandwidth pulse measurement system is used, with all components having a bandwidth of at least 10 GHz.