Sanjay Kariyappa, Hsinyu Tsai, et al.
IEEE T-ED
Analog memory offers enormous potential to speed up computation in deep learning. We study the use of phasechange memory (PCM) as the resistive element in a crossbar array that allows the multiply-accumulate operation in deep neural networks to be performed in-memory. With this promise comes several challenges, including this paper's main focus: The impact of conductance drift on deep neural network accuracy. Here we offer an overview of our recent work, including explanations of popular neural network architectures, along with a technique to compensate for drift ("slope correction") to allow in-memory computing with PCM during inference to reach software-equivalent deep learning baselines for a broad variety of important neural network workloads.
Sanjay Kariyappa, Hsinyu Tsai, et al.
IEEE T-ED
S. Sidler, Irem Boybat, et al.
ESSDERC 2016
Alvaro Padilla, Geoffrey W. Burr, et al.
IEEE T-ED
Pritish Narayanan, Lucas L. Sanches, et al.
ISCAS 2017