PaperDependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access MemoryJ. J. Nowak, Raphael P. Robertazzi, et al.IEEE Magnetics Letters
PaperPerpendicular Magnetic Anisotropy and Easy Cone State in Ta/Co60Fe20B20/MgOJustin M. Shaw, Hans T. Nembach, et al.IEEE Magnetics Letters
PaperResistance-area product and size dependence of spin-torque switching efficiency in CoFeB-MgO based magnetic tunnel junctionsJonathan Z. SunPhysical Review B
Conference paperDouble spin-torque magnetic tunnel junction devices for last-level cache applicationsG. Hu, C. Safranski, et al.IEDM 2022
