Bodhisatwa Sadhu, Alberto Valdes-Garcia, et al.
RFIC 2016
A low-voltage 3.0-5.6 GHz VCO was designed and fabricated in an 0.13 μm SOI CMOS process. This VCO features a single-loop horseshoe-shaped inductor and an array of band-switching accumulation MOS (AMOS) varactors. This results in good phase noise and wide tuning range of 58.7% when tuned between 0 to 1.4 V. At a I V supply (VDD) and 1 MHz offset, the phase noise is-120 dBc/Hz at 3.0 GHz, and-114.5 dBc/Hz at 5.6 GHz. The power dissipation is between 2 and 3 mW across the whole tuning range. The buffered output power is-7 dBm. When VDD is reduced to 0.83 V, the VCO dissipates less than 1 mW at 5.6 GHz.
Bodhisatwa Sadhu, Alberto Valdes-Garcia, et al.
RFIC 2016
Daeik Kim, Ongyeun Cho, et al.
CICC 2006
Alan J. Drake, Noah Zamdmer, et al.
IEEE International SOI Conference 2003
Karan Bhatia, Keunwoo Kim, et al.
IEEE SOI 2006