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Microelectronic Engineering
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A comparison of the E-beam sensitivities and relative O2-plasma stabilities of organosilicon polymers.Part III. Lithographic characteristics of poly-1,1,3-trimethyl-1-sila - and poly-1,1,3,3-tetramethyl-1,3- disilacyclobutenes and related silmethylene polymers

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Abstract

The electron beam sensitivities of three different types of high molecular weight polysilmethylene polymers and copolymers were investigated. It was found that methyl derivatives of these polymers have high sensitivities to irradiation and have a negative tone. The influence of the molecular weight upon electron beam sensitivity was also investigated. In contrast to polysiloxanes, phenyl containing polysilmethylenes were found to have a much higher sensitivity (up to 10 ¢c for poly-1,1-diphenyl- 1-silacyclobutane) and comparable thermal stabilities (up to 400°C). It was found that some of these polymers have similar lithographic properties to the more common polysiloxanes. Mechanisms of crosslinking and degradation reactions of these polymers are discussed. © 1989.

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Microelectronic Engineering

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