Kai Shum, P.M. Mooney, et al.
Applied Physics Letters
A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.
Kai Shum, P.M. Mooney, et al.
Applied Physics Letters
K. Ismail, B.S. Meyerson, et al.
Surface Science
Hossam Fahmy, K. Ismail
Applied Physics Letters
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003