M. Arafa, P. Fay, et al.
IEEE Electron Device Letters
A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters
J. Cai, P.M. Mooney, et al.
Journal of Applied Physics
Huiling Shang, E. Gousev, et al.
ICSICT 2004
T.N. Jackson, S. Nelson, et al.
Device Research Conference 1993