Abstract
A 5.2 GHz RF transmitter using a 0.5-μm SiGe BiCMOS technology is designed and measured. The IC contains an up-conversion mixer, a power-amplifier driver, a fully monolithic VCO and digital frequency divider. The transmitter exhibits a 24 dB up-conversion power gain with a flatness of ±0.65 dB over a 750 MHz bandwidth, and an output 1-dB compression of + 1 dBm for a total power consumptdon of 126 mW at 3.3V power supply. © 1999 IEEE.