A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f _T/f_MAX of 15/14 GHz VPNP, and f_T/f _MAX of 60/125 GHz HBT

Abstract

For the first time, we report a 0.24 μm SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particular, this technology provides 6.5V CMOS capability and VPNP with fT/fMAX of 15/14 GHz and BVCEO of 6.5 V which can be used to complement high breakdown NPN with fT of 30 GHz and BVceo of 6.0 V. ©2008 IEEE.