Publication
BCTM 2006
Conference paper
A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
Abstract
We present a 0.13 μm SiGe BiCMOS technology for millimeter wave applications. This technology features a high performance HBT (fT = 300 GHz /fmax = 330 GHz) along with various newly developed millimeter wave features, such varactor, Schottky and p-i-n diodes and other back end of line passives. © 2006 IEEE.