1 μm MOSFET VLSI Technology: Part Ill—Logic Circuit Design Methodology and Applications

Abstract

Logic circuits were designed and fabricated in a 1 μm silicon-gate MOSFET technology. First, conventional random logic chip images using the largely one-dimensional “Weinberger” layout are examined. The image is able to provide chips with an average circuit delay of 3 ns at the 8000 circuit level of integration. Second, two forms of PLA and PLA-based macros are discussed. A dynamic PLA, used in a microprocessor cross section and including 105 product terms, which achieves a 56 ns cycle time is described. A static PLA, designed for 21-ns delay and achieving measured delays from 13 to 21 ns, is also described. Extensions, particularly into low-temperature operation, are discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.