High-performance sub-0.25 μm CMOS technology with multiple thresholds and copper interconnects
- L. Su
- R. Schulz
- et al.
- 1998
- VLSI Technology 1998
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4 results at VLSI Technology 1998
Evaluation of Cu wiring in a production 64 Mb DRAM
- W. Cote
- G. Costrini
- et al.
- 1998
- VLSI Technology 1998
Evaluation of X-ray lithography using a 0.175 μm (0.245 μm2 cell area) 1 Gb DRAM technology
- Rosemary Longo
- S. Chaloux
- et al.
- 1998
- VLSI Technology 1998
0.21 μm2 7F2 trench cell with a locally-open globally-folded dual bitline for 1 Gb/4 Gb DRAM
- C. Radens
- U. Gruening
- et al.
- 1998
- VLSI Technology 1998