High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
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Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
- Geoffrey W. Burr
- Robert M. Shelby
- et al.
- 2014
- IEDM 2014
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- Sangbum Kim
- Masatoshi Ishii
- et al.
- 2015
- IEDM 2015
Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory
- Matthew Bright Sky
- Norma Sosa
- et al.
- 2015
- IEDM 2015
A tale of two erasure codes in HDFS
- Mingyuan Xia
- Mohit Saxena
- et al.
- 2015
- FAST 2015
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- IEDM 2015
Large-scale neural networks implemented with non-volatile memory as the synaptic weight element: Comparative performance analysis (accuracy, speed, and power)
- Geoffrey W. Burr
- Pritish Narayanan
- et al.
- 2015
- IEDM 2015
Off-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies
- Siyu Koswatta
- N. Mavilla
- et al.
- 2015
- IEDM 2015
Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility
- Ruqiang Bao
- Brian Greene
- et al.
- 2015
- IEDM 2015