High-mobility High-Ge-Content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Technology 2015
This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.