On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Jiahui Yuan
- John D. Cressler
- et al.
- 2009
- IEEE Transactions on Electron Devices
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Performance-aware corner model for design for manufacturing
- Chung-Hsun Lin
- Mohan V. Dunga
- et al.
- 2009
- IEEE Transactions on Electron Devices
The Corbino Pseudo-MOSFET on SOI: Measurements, model, and applications
- Sorin Cristoloveanu
- Turumella V. Chandrasekhar Rao
- et al.
- 2009
- IEEE Transactions on Electron Devices
Performance comparison between p-i-n tunneling transistors and conventional MOSFETs
- Siyuranga O. Koswatta
- Mark S. Lundstrom
- et al.
- 2009
- IEEE Transactions on Electron Devices
Benchmark tests for MOSFET compact models with application to the PSP model
- Xin Li
- Weimin Wu
- et al.
- 2009
- IEEE Transactions on Electron Devices
Selective device structure scaling and parasitics engineering: A way to extend the technology roadmap
- Lan Wei
- Jie Deng
- et al.
- 2009
- IEEE Transactions on Electron Devices
On the charge sheet superjunction (CSSJ) MOSFET
- S. Srikanth
- Shreepad Karmalkar
- 2008
- IEEE Transactions on Electron Devices
Characterization of fast relaxation during BTI stress in conventional and advanced CMOS devices with HfO2 gate stacks
- Andreas Kerber
- Kingsuk Maitra
- et al.
- 2008
- IEEE Transactions on Electron Devices
Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory - Experimental demonstration and analysis
- SangBum Kim
- Yuan Zhang
- et al.
- 2008
- IEEE Transactions on Electron Devices
Optimal design of triple-gate devices for high-performance and low-power applications
- Meng-Hsueh Chiang
- Jeng-Nan Lin
- et al.
- 2008
- IEEE Transactions on Electron Devices