Chung-Hsun Lin, Wilfried Haensch, et al.
VLSI Technology 2011
We present a methodology to generate performance-aware corner models (PAMs). Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (± σ and ±2σ) simulation and Monte Carlo simulation. Furthermore, PAM supports the practice of application-specific corner cards, for example, for gain-sensitive applications. © 2009 IEEE.
Chung-Hsun Lin, Wilfried Haensch, et al.
VLSI Technology 2011
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IEEE Electron Device Letters
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SISPAD 2012
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Nature Nanotechnology