Conference paper
A comparative study of fin-last and fin-first SOI FinFETs
Darsen Lu, Josephine Chang, et al.
SISPAD 2013
We present a methodology to generate performance-aware corner models (PAMs). Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (± σ and ±2σ) simulation and Monte Carlo simulation. Furthermore, PAM supports the practice of application-specific corner cards, for example, for gain-sensitive applications. © 2009 IEEE.
Darsen Lu, Josephine Chang, et al.
SISPAD 2013
Sujata Paul, Frank Yeh, et al.
IEEE Electron Device Letters
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VLSI Technology 2011
Cindy Wang, Josephine Chang, et al.
VLSI-TSA 2009