Publications

136 results at IEEE Transactions on Electron Devices

SiGe-Channel Heterojunction p-MOSFET’s
- - Sophie Verdonckt-Vandebroek
  - Bernard S. Meyerson
  - et al.
- 1994
- IEEE Transactions on Electron Devices
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- - Joachim N. Burghartz
  - Robert C. McIntosh
  - et al.
- 1994
- IEEE Transactions on Electron Devices
A Comprehensive Study of Hot-Carrier Instability in P- and N-Type Poly-SI Gated MOSFET’s
- - Charles C.-H. Hsu
  - Duen-Shun Wen
  - et al.
- 1994
- IEEE Transactions on Electron Devices
A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon
- - Thomas Vogelsang
  - Masaaki Tomizawa
  - et al.
- 1994
- IEEE Transactions on Electron Devices
Non-Quasi-Static Transient and Small-Signal Two-Dimensional Modeling of GaAs MESFET's with Emphasis on Distributed Effects
- - Sandip Tiwari
- 1993
- IEEE Transactions on Electron Devices
IIA-3 113-GHz f_T Graded-Base SiGe HBT's
- - E.F. Crabbé
  - B.S. Meyerson
  - et al.
- 1993
- IEEE Transactions on Electron Devices
IVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- - C.W. Seabury
  - C.W. Farley
  - et al.
- 1993
- IEEE Transactions on Electron Devices
IVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition
- - S.L. Wright
  - M.B. Rothwell
  - et al.
- 1993
- IEEE Transactions on Electron Devices
The Effect of Trench Corner Shapes on Local Stress Fields : A Three-Dimensional Finite-Element Modeling Study
- - Scott R. Stiffler
  - Arturo O. Cifuentes
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- - John D. Cressler
  - Emmanuel F. Crabbé
  - et al.
- 1993
- IEEE Transactions on Electron Devices