IEEE Transactions on Electron Devices

A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon

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In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron transport in silicon. Most of the codes are based on the Monte Carlo particle technique, and have been used here to calculate a relatively simple set of transport characteristics, such as the average electron energy. The results have been contributed by researchers from Japan, Europe, and the United States, and the results were subsequently collected by an independent observer. Although the computed data vary widely, depending on the models and input parameters which are used, they provide for the first time a quantitative (though not comprehensive) comparison of Boltzmann Equation solutions. © 1994, IEEE. All rights reserved.