Need for critical assessment
- Rolf Landauer
- 1996
- IEEE Transactions on Electron Devices
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136 results at IEEE Transactions on Electron Devices
Noise Performance of Si/Si1-xGex FET's
- A.F.M. Anwar
- Kuo-Wei Liu
- et al.
- 1995
- IEEE Transactions on Electron Devices
Si/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
Si/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
Silicon Bipolar Device Structures for Digital Applications: Technology Trends and Future Directions
- James D. Warnock
- 1995
- IEEE Transactions on Electron Devices
Data Storage in NOS: Lifetime and Carrier-to-Noise Measurements
- Bruce D. Terris
- Robert C. Barrett
- 1995
- IEEE Transactions on Electron Devices
A Room Temperature 0.1 µm CMOS on SOI
- Ghavam G. Shahidi
- Carl A. Anderson
- et al.
- 1994
- IEEE Transactions on Electron Devices
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part II—Circuit Performance and Device Self-Heating
- Joachim N. Burghartz
- Arturo O. Cifuentes
- et al.
- 1994
- IEEE Transactions on Electron Devices
Si/Si1-xGexValence Band Discontinuity Measurements Using a Semiconductor-Insulator-Semiconductor (SIS) Heterostructure
- Brian R. Bennett
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Transactions on Electron Devices
A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon
- Thomas Vogelsang
- Masaaki Tomizawa
- et al.
- 1994
- IEEE Transactions on Electron Devices