Joachim N. Burghartz, Arturo O. Cifuentes, et al.
IEEE Transactions on Electron Devices
The double-polysilicon self-aligned bipolar device structure has come a long way since its first inception, but there is still room for further scaling of this structure and continued improvements in performance. An analysis of the current state-of-the-art double-poly structure leads naturally to a discussion of future trends and technologies necessary to continue scaling into the sub-0.25 µm regime. In addition, it has become highly desirable to extend bipolar processes in new directions to take advantage of the opportunities offered by emerging materials technologies, such as bonded silicon-on-insulator films and medium or low temperature Si and SiGe epitaxy. Opportunities also exist for high-performance bipolars in BiCMOS technology and in complementary bipolar processes for low-power, high-speed digital applications. These extensions beyond “conventional” bipolar technology will be discussed in terms of their requirements and the device structures that are evolving to match these needs. © 1995 IEEE
Joachim N. Burghartz, Arturo O. Cifuentes, et al.
IEEE Transactions on Electron Devices
Ghavam G. Shahidi, Carl A. Anderson, et al.
IEEE Transactions on Electron Devices
John D. Cressler, Tze-Chiang Chen, et al.
IEEE T-ED
Charles F. Webb, Carl J. Anderson, et al.
IEEE Journal of Solid-State Circuits