Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control
- Kam-Leung Lee
- Isaac Lauer
- et al.
- 2010
- IWJT 2010
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123 results for Yu Zhu
Challenges and solutions of extremely thin SOI (ETSOI) for CMOS scaling to 22nm node and beyond
- Kangguo Cheng
- Ali Khakifirooz
- et al.
- 2010
- CSTIC 2010
Influence of bottom contact material on the selective chemical vapor deposition of crystalline GeSbTe alloys
- Alejandro G. Schrott
- Chieh-Fang Chen
- et al.
- 2010
- MRS Online Proceedings Library
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009
Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
On the dynamic resistance and reliability of phase change memory
- B. Rajendran
- M.H. Lee
- et al.
- 2008
- VLSI Technology 2008
Patterning of N:Ge2Sb2Te5 films and the characterization of etch induced modification for non-volatile phase change memory applications
- E. Joseph
- T.D. Happ
- et al.
- 2008
- VLSI-TSA 2008
Novel lithography-independent pore phase change memory
- M. Breitwisch
- T. Nirschl
- et al.
- 2007
- VLSI Technology 2007
High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films
- Lhacene Adnane
- Faruk Dirisaglik
- et al.
- 2017
- Journal of Applied Physics
Generalized Noise Study of Solid-State Nanopores at Low Frequencies
- Chenyu Wen
- Shuangshuang Zeng
- et al.
- 2017
- ACS Sensors