Transition to the quantum hall regime in InAs nanowire cross-junctions
- Johannes Gooth
- Mattias Borg
- et al.
- 2019
- Semiconductor Science and Technology
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117 results for Kirsten E. Moselund
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Mattias Borg
- Lynne Gignac
- et al.
- 2018
- Nanotechnology
InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Materials
Dopant-Induced Modifications of Ga xIn(1- x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)
- Nicolas Bologna
- Stephan Wirths
- et al.
- 2018
- ACS AMI
III-V heterostructure tunnel field-effect transistor
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Journal of Physics Condensed Matter
Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- Applied Physics Letters
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- IEEE J-EDS
Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
- Mattias Borg
- Heinz Schmid
- et al.
- 2015
- Journal of Applied Physics
Vertical III-V nanowire device integration on Si(100)
- Mattias Borg
- Heinz Schmid
- et al.
- 2014
- Nano Letters
Interface state density of single vertical nanowire MOS capacitors
- Philipp Mensch
- Kirsten E. Moselund
- et al.
- 2013
- IEEE TNANO