Transition to the quantum hall regime in InAs nanowire cross-junctions
- Johannes Gooth
- Mattias Borg
- et al.
- 2019
- Semiconductor Science and Technology
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178 results for Heinz Schmid
Monolithic Integration of III-V on Si Applied to Lasing Micro-Cavities: Insights from STEM and EDX
- Marilyne Sousa
- Svenja Mauthe
- et al.
- 2018
- NANO 2018
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Mattias Borg
- Lynne Gignac
- et al.
- 2018
- Nanotechnology
InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Materials
Modeling whispering gallery mode III-V micro-lasers monolithically integrated on Silicon
- Saurabh Sant
- Andreas Schenk
- et al.
- 2018
- NUSOD 2018
Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes
- Philipp Staudinger
- Svenja Mauthe
- et al.
- 2018
- Nano Letters
Dopant-Induced Modifications of Ga xIn(1- x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)
- Nicolas Bologna
- Stephan Wirths
- et al.
- 2018
- ACS AMI
Monolithic Integration of III -V on silicon for photonic and electronic applications
- Svenja Mauthe
- Heinz Schmid
- et al.
- 2018
- DRC 2018
III-V heterostructure tunnel field-effect transistor
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Journal of Physics Condensed Matter