200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules
- C. Wang
- S.W. Nam
- et al.
- 2013
- IEDM 2013
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20 results for R.D. Goldblatt
A high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
Evaluation of the chemical-mechanical planarization (CMP) performance of silicon nitride and silicon carbide as hard mask materials for Cu-based interconnect technology
- Wei-Tsu Tseng
- Jia Lee
- et al.
- 2002
- MRS Spring Meeting 2002
Functional high-speed characterization and modeling of a six-layer copper wiring structure and performance comparison with aluminum on-chip interconnections
- A. Deutsch
- H. Harrer
- et al.
- 1998
- IEDM 1998
Full copper wiring in a sub-0.25 μm CMOS ULSI technology
- D. Edelstein
- J. Heidenreich
- et al.
- 1997
- IEDM 1997
Integrity of ceramic packages upon liquid nitrogen cycling
- Ho-Ming Tong
- H.L. Yeh
- et al.
- 1989
- ECTC 1989
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
Integration of copper and fluorosilicate glass for 0.18 μm interconnections
- E. Barth
- T. Ivers
- et al.
- 2000
- IITC 2000