High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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6 results for William Spratt
Dust-Sized High-Power-Density Photovoltaic Cells on Si and SOI Substrates for Wafer-Level-Packaged Small Edge Computers
- Ning Li
- Kevin Han
- et al.
- 2020
- Advanced Materials
Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes
- Ning Li
- Kevin Han
- et al.
- 2019
- Nature Photonics
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
Materials challenges for III-V/Si co-integrated CMOS
- Devendra Sadana
- Cheng-Wei Cheng
- et al.
- 2015
- CICC 2015
Atomic layer epitaxy of InAs with high silicon doping concentration
- Doron Cohen Elias
- Guy Cohen
- et al.
- 2020
- JVSTA