Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
- Subramanian S. Iyer
- J.C. Tsang
- et al.
- 1989
- Applied Physics Letters
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228 results for Rudolf M. Tromp
Spectroscopy with the scanning tunnelling microscope: A critical review
- R.M. Tromp
- 1989
- Journal of Physics Condensed Matter
Noble-metal adsorption on Si(111): Medium-energy ion-scattering results for the Ag (3×3)R30 reconstruction
- M. Copel
- R.M. Tromp
- 1989
- Physical Review B
Structure of the Si(111)/CaF2 interface
- R.M. Tromp
- M.C. Reuter
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Structure determination of the Ge(111)-c(2×8) surface by medium-energy ion scattering
- P.M.J. Marée
- K. Nakagawa
- et al.
- 1988
- Physical Review B
Atomic structure of the arsenic-saturated Si(111) surface
- M. Copel
- R.M. Tromp
- et al.
- 1988
- Physical Review B
Tip electronic structure in scanning tunneling microscopy
- R.M. Tromp
- E.J. Van Loenen
- et al.
- 1988
- Physical Review B
Structural perfection of the Si(111)-(1×1) As surface
- M. Copel
- R.M. Tromp
- 1988
- Physical Review B
Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces
- M. Copel
- R.M. Tromp
- et al.
- 1988
- Applied Physics Letters
Auger analyzer translation using ball bushings
- M.C. Reuter
- R.M. Tromp
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films