About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Scanning tunneling microscopy of Si(001)
Abstract
The atomic structure of the Si(001) surface has been examined with use of scanning tunneling microscopy (STM). The STM images reveal a dimer-type reconstruction and are inconsistent with chain and vacancy models. Both buckled and nonbuckled dimers are observed, giving rise to regions of (2×1), c(4×2), and p(2×2) symmetry. The surface has a high density of vacancy-type defects, which appear to induce or stabilize buckling of the dimers at room temperature. The STM images also reveal the atomic structure at steps and defects. At high annealing temperature the step density increases dramatically, eventually leading to faceting. © 1986 The American Physical Society.