Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
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36 results for Zhen Zhang
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Interaction of NiSi with dopants for metallic source/drain applications
- Jun Luo
- Zhi-Jun Qiu
- et al.
- 2010
- Journal of Vacuum Science and Technology B
Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-x Ptx on Si substrate
- Zhen Zhang
- Shi Li Zhang
- et al.
- 2010
- Applied Physics Letters
Stress determination in nickel monosilicide films using x-ray diffraction
- Conal E. Murray
- Zhen Zhang
- et al.
- 2009
- Journal of Applied Physics
Towards schottky-barrier source/drain MOSFETs
- Mikael Östling
- Valur Gudmundsson
- et al.
- 2008
- ICSICT 2008