Ultra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters
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36 results for Zhen Zhang
Interconnect material choices for future scaled devices
- Gregory Fritz
- Adam Pyzyna
- et al.
- 2012
- ADMETA 2012
Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission
- Zhen Zhang
- Joanna Atkin
- et al.
- 2012
- IEEE T-ED
Leakage and contact resistance reduction by diffusion of dopants in NiPt suicide
- Ahmet Ozcan
- Ming Cai
- et al.
- 2011
- ADMETA 2011
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Epitaxy of ultrathin NiSi2 films with predetermined thickness
- Xindong Gao
- Joakim Andersson
- et al.
- 2011
- Electrochemical and Solid-State Letters
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-x Ptx silicide films
- Zhen Zhang
- Bin Yang
- et al.
- 2010
- Applied Physics Letters
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010