Publications

39 results for Sangbum Kim

A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications
- - Win-San Khwa
  - Meng-Fan Chang
  - et al.
- 2017
- IEEE JSSC
Neuromorphic computing using non-volatile memory
- - Geoffrey W. Burr
  - Robert M. Shelby
  - et al.
- 2016
- Advances in Physics: X
Training a Probabilistic Graphical Model with Resistive Switching Electronic Synapses
- - Sukru Burc Eryilmaz
  - Emre Neftci
  - et al.
- 2016
- IEEE T-ED
Investigation of phase change memory confined cell endurance using transmission electron microscopy (TEM)
- - Yu Zhu
  - Sangbum Kim
  - et al.
- 2016
- ISTFA 2016
A Retention-Aware multilevel cell phase change memory program evaluation metric
- - Win-San Khwa
  - Meng-Fan Chang
  - et al.
- 2016
- IEEE Electron Device Letters
A Phase Change Memory Cell With Metal Nitride Liner as a Resistance Stabilizer to Reduce Read Current Noise for MLC Optimization
- - Sangbum Kim
  - Norma Sosa
  - et al.
- 2016
- IEEE T-ED
A Double-Data-Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read-Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications
- - H. Lung
  - C. Miller
  - et al.
- 2016
- IMW 2016
Recent Progress in Phase-Change Memory Technology
- - Geoffrey W. Burr
  - Matthew BrightSky
  - et al.
- 2016
- IEEE JESTCS
A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
- - Win-San Khwa
  - Meng-Fan Chang
  - et al.
- 2016
- ISSCC 2016
Capacity optimization of emerging memory systems: A shannon-inspired approach to device characterization
- - Jesse H. Engel
  - Sukru Burc Eryilmaz
  - et al.
- 2014
- IEDM 2014