Ultra-thin oxide reliability for ULSI applications
- Ernest Y. Wu
- James H. Stathis
- et al.
- 2000
- Semiconductor Science and Technology
Publications
65 results for Ernest Y. Wu
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
Challenges for accurate reliability projections in the ultra-thin oxide regime
- E. Wu
- W.W. Abadeer
- et al.
- 1999
- IRPS 1999
Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates
- L.K. Han
- S.W. Crowder
- et al.
- 1997
- IEDM 1997
Modeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- VLSI Technology 1997