Effect of Capping Layer Under Forming Gas Anneal for Back-End-of-Line Oxide Semiconductor FETsSaketh Ram MamidalaAntonio La Portaet al.2025DRC 2025
On-Chip Training and Inference using Analog CMO/HfOx ReRAM Artificial SynapsesDonato Francesco FalconeVictoria Clericoet al.2025Neuronics 2025
Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory TasksWooseok ChoiThomas Van Bodegravenet al.2025IMW 2025
Cryogenic Analog 1T-ReRAM with Enhanced Dynamic Range and Suppressed Noise for Cold Neural NetworksSaketh Ram MamidalaDavide Lombardoet al.2024IEDM 2024
Analog Conductive-Metal-Oxide/HfOx ReRAM Devices - BEOL Integration, Characterization and ModellingDonato Francesco FalconeValeria Bragagliaet al.2024MRS Fall Meeting 2024
Advancements in Memristor Device Development: From Material Stack Optimization to Physical ModellingValeria BragagliaDonato Francesco Falconeet al.2024B-MRS 2024
Compact Model of Conductive-Metal-Oxide/HfOx Analog Filamentary ReRAM DevicesMatteo GalettaDonato Francesco Falconeet al.2024ESSERC 2024
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfO𝑥 ReRAM DevicesDavide LombardoSaketh Ram Mamidalaet al.2024DRC 2024
CMOS compatible Materials and Devices for beyond von NeumannValeria BragagliaDonato Francesco Falconeet al.2024CIMTEC 2024
Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfOx ReRAM devicesDonato Francesco FalconeStephan Menzelet al.2024Nanoscale Horizons