Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresistAdam PrandaKang Yi Linet al.2020JVSTA
Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective depositionKang Yi LinChen Liet al.2020JVSTA
Gel-on-a-chip: Continuous, velocity-dependent DNA separation using nanoscale lateral displacementBenjamin WunschSung-Cheol Kimet al.2019Lab on a Chip
Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursorsKang Yi LinChen Liet al.2018JVSTA
Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processesHiroyuki MiyazoeNathan Marchacket al.2018JVSTB
Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applicationsNathan MarchackHiroyuki Miyazoeet al.2018JVSTB
Polymer etching by atmospheric-pressure plasma jet and surface micro-discharge sources: Activation energy analysis and etching directionalityAndrew J. KnollPingshan Luanet al.2018Plasma Processes and Polymers
Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymerSebastian U. EngelmannRobert L. Bruceet al.2017JVSTB
Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasmaDominik MetzlerChen Liet al.2016JVSTA