Layout dependence of gate dielectric TDDB in HKMG FinFET technology
- Wen Liu
- Ernest Y. Wu
- et al.
- 2016
- IRPS 2016
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10 results for Michael Shinosky
A method for rapid screening of various low-k TDDB models
- F. Chen
- Carole Graas
- et al.
- 2015
- IRPS 2015
Temperature and field interrelation study of low-k TDDB for Cu interconnects with and without liner - New insights to the roles of Cu for a competing breakdown process
- Fen Chen
- Michael Shinosky
- et al.
- 2013
- IRPS 2013
Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- Fen Chen
- Jeffrey Gambino
- et al.
- 2012
- IRPS 2012
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
A comparative study of ULK conduction mechanisms and TDDB characteristics for Cu interconnects with and without CoWP metal cap at 32nm technology
- F. Chen
- E. Huang
- et al.
- 2010
- IITC 2010
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- F. Chen
- M. Shinosky
- et al.
- 2009
- IRPS 2009
Line edge roughness and spacing effect on low-k TDDB characteristics
- F. Chen
- J.R. Lloyd
- et al.
- 2008
- IRPS 2008
Breakdown data generation and in-die deconvolution methodology to address BEOL and MOL dielectric breakdown challenges
- F. Chen
- Carole Graas
- et al.
- 2015
- Microelectronics Reliability
Invasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion
- Fen Chen
- Michael Shinosky
- et al.
- 2012
- Applied Physics Letters