Physical modeling and design rules of analog Conductive Metal Oxide-HfO2ReRAM
- Donato Francesco Falcone
- Stephan Menzel
- et al.
- 2023
- IMW 2023
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8 results for Donato Francesco Falcone
Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOxReRAM
- T. Stecconi
- Y. Popoff
- et al.
- 2022
- ESSDERC 2022
Equivalent electrical circuit modelling of a TaOx/HfOxbased RRAM with optimized resistance window and multilevel states
- T. Stecconi
- Y. Popoff
- et al.
- 2022
- DRC 2022
High-Conductance, Ohmic-like HfZrO4Ferroelectric Memristor
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- ESSCIRC 2021
Crossbar operation of BiFeO3/Ce–CaMnO3 ferroelectric tunnel junctions: From materials to integration
- Mattia Halter
- Elisabetta Morabito
- et al.
- 2023
- Journal of Materials Research
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- IEEE J-EDS
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
- Laura Bégon-Lours
- Mattia Halter
- et al.
- 2022
- Neuromorph. Comput. Eng.
Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
- Laura Bégon-Lours
- Mattia Halter
- et al.
- 2022
- Advanced Electronic Materials