Multi-Level, Low-Voltage Programming of Ferroelectric HfO2/ZrO2 Nanolaminates Integrated in the Back-End-Of-Line

Abstract

Functionalizing the Back-End-Of-Line of integrated circuits with non-volatile memories enables the deployment of in-memory computing architectures. By partitioning HfZrO4 into HfO2-ZrO2 nanolaminates, the remanent polarization and the capacitance are improved by 14 and 29%, respectively. Ferroelectric capacitors are integrated into the Back-End-Of-Line of a silicon circuit with NMOS transistors. Bipolar, multilevel polarization programming is possible below 3V, allowing device operation through NMOS transistors. The influence of the substrate on the nanolaminate’s material properties is discussed.