Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
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194 results for Christian Lavoie
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Silicide challenges for 22nm technologies and beyond
- Paul R. Besser
- Christian Lavoie
- et al.
- 2008
- ECS Meeting 2008
Material and integration issues for rare-Earth Silicides as gate and diffusion contacts in advanced CMOS
- C. D'Emic
- K. Ohuchi
- et al.
- 2008
- ECS Meeting 2008
FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
Implementation of robust nickel alloy salicide process for high-performance 65nm SOI CMOS manufacturing
- Jay Strane
- David Brown
- et al.
- 2007
- VLSI-TSA 2007
Physical, electrical, and reliability characterization of Ru for Cu interconnects
- C.-C. Yang
- T. Spooner
- et al.
- 2006
- IITC 2006
Thermal stress evaluation of a PCRAM material Ge2Sb 2Te5
- K.N. Chen
- L. Krusin-Elbaum
- et al.
- 2006
- NVSMW 2006
Influence of alloying elements on the formation and stability of NiSi
- C. Detavernier
- D. Deduytsche
- et al.
- 2006
- ECS Meeting 2006